Electronic Device & Circuits – Page 9 – HI MCQ!

A structure obtained by lightly doped n drift region between the layers of a per junction a PIN diode is obtained. This structure is effective in?

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Consider the following statements about a Tunnel diode: 1. Tunnelling takes place at a speed decided by junction temperature. 2. Concentration of impurities is of the order of 1 part in 10. 3. Both tunnelling current and normal pe junction injection current exist 4. Tunnel diode exhibits current controlled negative resistance characteristic only. Which of the above statements is/are correct?

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Consider the following statements about p- junctions: 1. p-n junction behaves as a capacitor when forward biased. 2 p-n junction has p and n type semiconductors with depletion layer in between 3. p- junction has a wider depletion layer as compared to a zener diode. Which of the statements given above are correct?

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Intermediate (I) layer of PIN-diode imparts which one of the following features to a pn junction diode?

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For a Schottky-barrier diode which one of the following points is true?

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Write the incorrect statement. A varactor diode?

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The internal resistance of a current source used in the model of BJT while analysing a circuit using BJT is?

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The emitter of a transistor is generally doped the heaviest because it?

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Which one of the following statements is not correct?

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In a junction transistor, recombination of electrons and holes occurs in?

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