Electronic Device & Circuits – Page 20 – HI MCQ!

A bipolar junction transistor with forward current transfer ratio?=0.98, when working in CE mode, provides current transfer ratio Beta as?

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The extremely high input impedance of a MOSFET is primarily because of?

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In the fabrication of n-p-n transistor in an IC. the buried layer the p-type substrate is?

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In n-channel enhancement MOSFET, at a fixed drain voltage?

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the drain current is zero for negative bias voltage to gate and it increases as the negative gate bins is decreased in magnitude
the drain current is maximum at zero gate voltage and it decreases with applied negative gate voltage
the drain current has a finite value at zero gate voltage and it increases or decreases with the applied voltage of proper polarity
the drain current is zero at zero gate voltage and it increases with the positive applied gate voltage

One of the following materials is not used as substrate for the fabricating of MICS?

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Which of the following devices is used in the microprocessors?

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The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called?

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The most significant factor in the relative manufacturing cost of components is?

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In switching diode fabrication, a dopant is introduced into silicon which introduces additional trap levels in the material thereby reducing the mean life time of carriers. This dopant is?

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Which one of the following statements is correct In the context of IC fabrication, metallisation means?

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