Electronic Device & Circuits – Page 2 – HI MCQ!

The small value of drain-to-source voltage, JFET behaves like a?

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Diffusion of impurities in a semiconductor is carried out in a farmace through which a steady stream of impurity atoms is passed during the entire diffusion process. What would be the type of profile of the impurity stoms inside the semiconductor?

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Which of the following statements is not correct regarding h parameters of transistor?

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The phenomenon known as Early Effect in a bipolar transistor refers to a reduction of the effective base-width caused by?

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An incremental model of a solid state device is one which represents the?

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Which one of the following statements with reference to effective mass is incorrect?

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Consider the following statements pertaining to tunnel diodes: 1. Impurity concentration is high. 2 Carrier velocities are low. 3. They have current-controlled V-I characteristic. Which of the statements given above is/are correct?

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Consider the following statements for a p-n junction diode: 1. It is an active component. 2. Depletion layer width decreases with forward biasing. 3. In the reverse biasing case, saturation current increases with increasing temperature. Which of the statements given above are correct?

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Consider the following statements: A tunnel diode is 1. made of Ge or GaAs 2 an abrupt junction with both sides heavily doped. 3. a hyper abrupt junction with both sides heavily doped. 4. majority carrier device. Which of these statements are correct?

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If for a silicon n-p-n transistor, the base-to-emitter voltage (VB) is 0.7 V and the collector-to-base voltage (Ven) is 0.2 V. then the transistor is operating in the?

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